P-N JUNCTION DIODE

Hey guys i'am here again to share my knowledge about the ""P-N JUNCTION DIODE". When the N-type semiconductor and P-type semiconductor materials are first joined together a very large density gradient exists between both sides of the PN junction. The result is that some of the free electrons from the donor impurity atoms begin to migrate across this newly formed junction to fill up the holes in the P-type material producing negative ions. However, because the electrons have moved across the PN junction from the N-type silicon to the P-type silicon, they leave behind positively charged donor ions ( N D ) on the negative side and now the holes from the acceptor impurity migrate across the junction in the opposite direction into the region where there are large numbers of free electrons. As a result, the charge density of the P-type along the junction is filled with negatively charged acceptor ions ( N A ), and the charge density of the N-type along the junct...